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| (R) STPS30L60CW POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) 2 x 15 A 60 V 150C 0.56 V A2 K FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE A2 K A1 DESCRIPTION Dual center tap Schottky rectifiers suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-247 this device is intended for use in high TO-247 ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM Tstg Tj dV/dt *: Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 130C = 0.5 Per diode Per device Value 60 30 15 30 230 2 - 65 to + 175 150 10000 Unit V A A A A C C V/s tp = 10 ms Sinusoidal tp=2 s square F=1kHz dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth(j-a) July 1999 - Ed: 1A 1/4 STPS30L60CW THERMAL RESISTANCES Symbol Rth(j-c) Rth(c) Junction to case Parameter Per diode Total Coupling Value 1.5 0.8 0.1 Unit C/W C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation : P = 0.42 x IF(AV) + 0.009 IF2(RMS) IF = 15 A IF = 15 A IF = 30 A IF = 30 A 0.65 0.5 VR = VRRM 77 Min. Typ. Max. 480 130 0.6 0.56 0.75 0.7 Unit A mA V VF * Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 12 10 8 6 4 2 IF(av) (A) 0 0 2 4 6 8 10 12 14 =tp/T tp T Fig. 2: Average forward current versus ambient temperature( = 0.5, per diode). 18 16 14 12 10 8 6 4 2 0 IF(av)(A) Rth(j-a)=Rth(j-c) = 0.1 = 0.05 = 0.2 = 0.5 =1 Rth(j-a)=15C/W T =tp/T tp Tamb(C) 50 75 100 125 150 16 18 20 0 25 2/4 STPS30L60CW Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). 250 200 150 Tc=25C Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) IM(A) 1.0 0.8 0.6 Tc=75C = 0.5 100 50 IM t 0.4 0.2 = 0.2 = 0.1 Tc=125C =0.5 0 1E-3 t(s) 1E-2 1E-1 1E+0 Single pulse tp(s) 1E-3 1E-2 1E-1 1E+0 0.0 1E-4 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(mA) Tj=150C Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 2.0 1.0 0.5 F=1MHz Tj=25C 5E+2 1E+2 1E+1 1E+0 Tj=125C Tj=100C Tj=75C Tj=50C 1E-1 1E-2 Tj=25C 0.2 VR(V) 0 5 10 15 20 25 30 35 40 45 50 55 60 0.1 1 VR(V) 10 100 Fig. 7: Forward voltage drop versus forward current (maximum values, per diode). 200 100 IFM(A) Typical values Tj=150C Tj=25C 10 Tj=125C VFM(V) 1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 3/4 STPS30L60CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS V REF. Millimeters Inches Typ. Max. 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5 60 0.143 V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D Min. Typ. Max. Min. A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5 V2 60 Dia. 3.55 3.65 0.139 Cooling method : C Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Delivery mode Tube Bulk Ordering type STPS30L60CW STPS30L60CW Marking STPS30L60CW STPS30L60CW Package TO-247 TO-247 Weight 4.4g 4.4g Base qty 50 1000 Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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